Enhanced Electrical Properties and Stability in IGZO TFTs via Low-Temperature Activation with MgOx Layer
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
Funder
Ministry of Trade, Industry and Energy
Publisher
American Chemical Society (ACS)
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.4c06708
Reference26 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Recent progress in the development of backplane thin film transistors for information displays
3. A novel LTPO AMOLED pixel circuit and driving scheme for variable refresh rate
4. High-Speed Current Switching of Inverted-Staggered Bottom-Gate a-IGZO-Based Thin-Film Transistors with Highly Stable Logic Circuit Operations
5. Flexible, Transparent, High Mobility Amorphous In–Ga–Zn-O Thin Film Transistors Fabricated on Textile
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