High-Speed Current Switching of Inverted-Staggered Bottom-Gate a-IGZO-Based Thin-Film Transistors with Highly Stable Logic Circuit Operations
Author:
Affiliation:
1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
Funder
National Research Foundation of Korea
Korea Basic Science Institute
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00394
Reference19 articles.
1. Electronic-photonic arithmetic logic unit for high-speed computing
2. Pulsed Gate Switching of MoS 2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors
3. Flexible low-voltage high-frequency organic thin-film transistors
4. Switching Characteristics of a Thin Film SOI Power MOSFET
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