IGZO charge trap flash device for reconfigurable logic functions

Author:

Park Eunpyo12ORCID,Woo Dong Yeon13,Noh Gichang1,Jo Yooyeon1ORCID,Lee Dae Kyu1,Park Jongkil1,Kim Jaewook1,Jeong YeonJoo1ORCID,Park Seongsik1ORCID,Jang Hyun Jae1ORCID,Choi Nakwon3ORCID,Kim Sangbum245ORCID,Kwak Joon Young6ORCID

Affiliation:

1. Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST) 1 , Seoul 02792, South Korea

2. Department of Materials Science & Engineering, Seoul National University 2 , Seoul 08826, South Korea

3. KU-KIST Graduate School of Converging Science and Technology, Korea University 3 , 145 Anam-ro, Seongbuk-gu, Seoul 02841, South Korea

4. Research Institute of Advanced Materials (RIAM), Seoul National University 4 , Seoul 08826, South Korea

5. Inter-University Semiconductor Research Center (ISRC), Seoul National University 5 , Seoul 08826, South Korea

6. Department of Convergence Electronic and Semiconductor Engineering, Ewha Womans University 6 , Seoul 03760, South Korea

Abstract

We fabricated an indium gallium zinc oxide (IGZO) charge trap flash (CTF) device for logic-in-memory (LIM) applications. Initially, the nonvolatile memory characteristics of the IGZO CTF device were investigated under charge trapping and detrapping states in 104 s retention tests. Next, we constructed a common-source amplifier circuit containing the IGZO CTF device and demonstrated various input–output signal relationships by modulating the memory state of the device. Finally, we used interconnected IGZO CTF devices to demonstrate reconfigurable logic functions. Using series- and parallel-connected IGZO CTF devices, we developed 2-input NAND and 2-input NOR gates, respectively. Our experimental results showed that the IGZO CTF device is a promising future memory device and a tool for LIM technology.

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

Publisher

AIP Publishing

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