Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1790027
Reference17 articles.
1. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
3. Growth and characterization of Si1−xGexand Ge epilayers on (100) Si
4. Growth and characterization of Si1−xGexand Ge epilayers on (100) Si
5. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
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