Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2187409
Reference26 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
3. Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
4. Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer
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3. Ιn situ N2-NH3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD;Journal of Applied Physics;2019-09-28
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