Stimulated emission in a degenerately doped GaAs quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93232
Reference8 articles.
1. Laser Transition and Wavelength Limits of GaAs
2. Quantum-well heterostructure lasers
3. High‐energy (Visible‐red) stimulated emission in GaAs
4. Carrier collection in a semiconductor quantum well
5. Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilities
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1. Three‐terminal bias induced dual wavelength semiconductor light emitter;Applied Physics Letters;1994-08
2. Two‐terminal bias induced dual wavelength semiconductor light emitter;Applied Physics Letters;1993-12-13
3. Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1−xAs single quantum wells;Physical Review B;1992-02-15
4. InGaAs‐GaAs‐AlGaAs strained‐layer laser with heavy silicon doping;Journal of Applied Physics;1991-07-15
5. Stimulated visible light emission from ultrathin GaAs single and multiple quantum wells sandwiched between indirect‐gap (Al0.49Ga0.51As) confining layers;Applied Physics Letters;1990-05-14
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