Laser Transition and Wavelength Limits of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658179
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5. THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY‐DOPED LIMIT
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1. Physical Principles of the Operation of Semiconductor Lasers;Physics of Semiconductor Lasers;1991
2. High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique;IEEE Journal of Quantum Electronics;1990-05
3. Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures;Journal of Applied Physics;1990-02-15
4. Quarter‐wave Bragg reflector stack of InP‐In0.53Ga0.47As for 1.65 μm wavelength;Applied Physics Letters;1990-01-22
5. Semiconductor Lasers;Infrared Absorbing Dyes;1990
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