THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY‐DOPED LIMIT
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652535
Reference9 articles.
1. A Criterion for Exciton Binding in Dense Electron—Hole Systems—Application to Line Narrowing Observed in GaAs
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3. MANY‐BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER
4. BAND‐FILLING MODEL FOR GaAs INJECTION LUMINESCENCE
5. Radiative decay in compound semiconductors
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1. Physical Principles of the Operation of Semiconductor Lasers;Physics of Semiconductor Lasers;1991
2. Chapter 2 Heterojunction Laser Diodes;Semiconductors and Semimetals;1979
3. Chapter 1 Photopumped III-V Semiconductor Lasers;Semiconductors and Semimetals;1979
4. Effects of excitation-induced optical absorption in highly excited semiconductors;physica status solidi (b);1975-11-01
5. Temperature dependence of the band gap and comparison with the threshold frequency of pure GaAs lasers;Journal of Applied Physics;1975-06
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