1. P-n junction lasers;Burns,1964
2. Properties of heavily doped germanium;Pankove;Prog. Semicond.,1965
3. Gallium arsenide;Hilsum;Prog. Semicond.,1965
4. Coherent and incoherent recombination radiation in semiconductor diodes;Unger;Fortschr. Phys.,1965
5. Use of indirect transitions in semiconductors for the determination of states with negative absorption coefficients;Basov;J.E.T.P.,1960