MANY‐BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651932
Reference6 articles.
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5. Laser operation of CdSe pumped with a Ga(AsP) laser diode
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physical Principles of the Operation of Semiconductor Lasers;Physics of Semiconductor Lasers;1991
2. Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effects;Physical Review B;1982-08-15
3. Spontaneous and stimulated carrier lifetimes (77°K) in GaAs1−xPx and GaAs1−xPx : N;Applied Physics Letters;1974-04
4. Fundamentals of stimulated emission in semiconductors;Journal of Luminescence;1973-01
5. Long‐Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers;Journal of Applied Physics;1972-05
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