Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1−xAs single quantum wells-Reference-Cited by-同舟云学术

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Optically induced carrier transfer in silicon anti-modulation-doped GaAs/AlxGa1−xAs single quantum wells

Published:1992-02-15 Issue:8 Volume:45 Page:4227-4236
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Harris C. I.,Monemar B.,Brunthaler G.,Kalt H.,Köhler K.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.45.4227/fulltext

Reference31 articles.

1. Novel hybrid optically bistable switch: The quantum well self‐electro‐optic effect device

2. Many-body effects on the luminescence spectrum of modulation-doped quantum wells

3. Many-body effects in the absorption, gain, and luminescence spectra of semiconductor quantum-well structures

4. Spectroscopy of a high-mobility GaAs-Ga1−xAlxAs one-side-modulation-doped quantum well

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures;Journal of Applied Physics;1996-09

2. Many-Body Effects in Multi-Valley Scenarios;Springer Series in Solid-State Sciences;1996

3. Shubnikov–de Haas oscillations under hot-electron conditions in Si/Si1−xGexheterostructures;Physical Review B;1994-04-15

4. Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1−xAs quantum wells from below to above the metallic limit;Physical Review B;1993-08-15

5. 4.2.5 References for 4.1 and 4.2;Landolt-Börnstein - Group III Condensed Matter

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