Unraveling crystal symmetry and strain effects on electronic band structures of SiC polytypes
Author:
Affiliation:
1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0010512
Reference46 articles.
1. First-Principles Study of BN, SiC, and AlN Polytypes
2. Electronic Band Structure of SiC Polytypes: A Discussion of Theory and Experiment
3. Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN
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