Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN-Reference-Cited by-同舟云学术

Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN

Published:2019-09-09 Issue:11 Volume:115 Page:112102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuroiwa Yuichiro¹,Matsushita Yu-ichiro¹²^ORCID,Harada Kou¹,Oba Fumiyasu¹³^ORCID

Affiliation:

1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan

2. Academy for Convergence of Materials and Informatics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, Japan

3. Center for Materials Research by Information Integration, Research and Services Division of Materials Data and Integrated System, National Institute for Materials Science, Tsukuba 305-0047, Japan

Funder

Japan Society for the Promotion of Science

Core Research for Evolutional Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5122215

Reference37 articles.

1. SiC devices: physics and numerical simulation

2. High-voltage double-implanted power MOSFET's in 6H-SiC

3. 1.1 kV 4H-SiC power UMOSFETs

4. Fundamentals of Silicon Carbide Technology

5. Power semiconductor device figure of merit for high-frequency applications

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