Self-assembling of Ge on finite Si(001) areas comparable with the island size
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1576498
Reference10 articles.
1. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
2. Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film
3. Kinetics of high‐temperature thermal decomposition of SiO2 on Si(100)
4. Size distribution and optical properties of self-assembled Ge on Si
5. Lithographic positioning of self-assembled Ge islands on Si(001)
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2. Morphological Evolution of Pit-Patterned Si(001) Substrates Driven by Surface-Energy Reduction;Nanoscale Research Letters;2017-09-29
3. Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography;Applied Physics Letters;2014-10-13
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5. Growth kinetics in a strained crystal film on a wavy patterned substrate;Journal of Physics: Condensed Matter;2012-01-03
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