Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference12 articles.
1. Scanning tunneling microscopy study on void formation by thermal decomposition of thin oxide layers on stepped Si surfaces
2. Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy
3. Pyramidal Si nanocrystals with a quasiequilibrium shape selectively grown on Si(001) windows in ultrathinSiO2films
4. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
5. Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
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