Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122415
Reference12 articles.
1. Selective growth condition in disilane gas source silicon molecular beam epitaxy
2. Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films
3. Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams
4. Electron-Beam-Induced Selective Thermal Decomposition of UltrathinSiO2Layers Used in Nanofabrication
5. Nanometer-scale germanium islands on Si(111) surface windows formed in an ultrathin silicon dioxide film
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