Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams-Reference-Cited by-同舟云学术

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Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams

Published:1997-05 Issue:3 Volume:15 Page:1493-1498
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Fujita S.,Maruno S.,Watanabe H.,Ichikawa M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.580568

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Dewetting behavior of Ge layers on SiO2 under annealing;Scientific Reports;2020-08-13

3. Thin membranes versus bulk substrates: investigation of proximity effects in focused electron beam-induced processing;Journal of Physics D: Applied Physics;2012-05-18

4. Patterns in Ge cluster growth on clean and oxidized Si(111)-(7×7) surfaces;Surface Science;2012-05

5. Generation of clean iron nanocrystals on an ultra-thin SiOx film on Si(001);Physical Chemistry Chemical Physics;2011

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