Dewetting behavior of Ge layers on SiO2 under annealing

Abstract

AbstractThe solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of layer thickness dGe (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580–700 °C, depending on dGe, through the appearance of surface undulation leading to the particle formation and the rupture of Ge layers by narrow channels or rounded holes in the layers with the thicknesses of 10–60 and 86 nm, respectively. The channel widths are significantly narrower than the distance between the particles that causes the formation of thinned Ge layer areas between particles at the middle dewetting stage. The thinned areas are then agglomerated into particles of smaller sizes, leading to the bimodal distributions of the Ge particles which are different in shape and size. The existence of a maximum in the particle pair correlation functions, along with the quadratic dependence of the corresponding particle spacing on dGe, may indicate the spinodal mechanism of the dewetting in the case of relatively thin Ge layers. Despite the fact that the particle shape, during the solid-state dewetting, is not thermodynamically equilibrium, the use of the Young’s equation and contact angles allows us to estimate the particle/substrate interface energy.