Degradation of ferroelectric properties in integrated Pt/SrBi2Ta2O9/Pt capacitor by impurity diffusion from interlevel dielectric layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1525060
Reference6 articles.
1. Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications
2. Analysis of Processing Damage on a Ferroelectric SrBi2Ta2O9Capacitor for Ferroelectric Random Access Memory Device Fabrication
3. Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors
4. Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors
5. Transmission electron microscopy study of hydrogen-induced degradation in strontium bismuth tantalate thin films
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration;Electronics Letters;2011
2. Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory;Journal of Applied Physics;2006-09
3. Effects of oxygen partial pressure and ion doping on the ferroelectricity and microstructures of sputter-deposited Bi3.25La0.75Ti3O12 films;Thin Solid Films;2005-01
4. Integration of MOCVD SBT Stacked Ferroelectric Capacitors in a 0.35 μ m CMOS Technology;Integrated Ferroelectrics;2004-01
5. Performance and Reliability of Low-Temperature Processed SrBi[sub 2]Ta[sub 2]O[sub 9] Capacitors for FeRAM Applications;Journal of The Electrochemical Society;2004
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