Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126882
Reference18 articles.
1. Analysis of the degradation of PZT and SrBi2Ta2O9 thin films with a reductive process
2. Evaluation of electrical properties and SIMS profiles on forming gas(N2-H2) annealed Pt/PZT/Pt capacitors
3. H2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode
4. Relationships among ferroelectric fatigue, electronic charge trapping, defect-dipoles, and oxygen vacancies in perovskite oxides
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