Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film–Insulator-Silicon Structure-Reference-Cited by-同舟云学术

Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film–Insulator-Silicon Structure

Published:2013-01 Issue:1 Volume:143 Page:40-46
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Chen Kai-Huang¹,Cheng Chien-Min²,Lin Chun-Cheng³,Tsai Jen-Hwan³

Affiliation:

1. a Department of Electronics Engineering and Computer Science , Tung-Fang Design University , Kaohsiung , Taiwan , R.O.C.

2. b Department of Electronic Engineering , Southern Taiwan University of Science and Technology , Tainan , Taiwan , R.O.C.

3. c Department of Mathematics and Physics , Chinese Air Force Academy, Kangshan , Kaohsiung , Taiwan , R.O.C.

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584587.2013.795840

Reference18 articles.

1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

2. Memory retention and switching behavior of metal-ferroelectric-semiconductor transistors

3. Pulsed laser deposition and ferroelectric characterization of bismuth titanate films

4. Ferroelectric field‐effect memory device using Bi4Ti3O12film

5. Ferroelectric switching of a field‐effect transistor with a lithium niobate gate insulator

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