Transmission electron microscopy study of hydrogen-induced degradation in strontium bismuth tantalate thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372165
Reference6 articles.
1. Ferroelectric non-volatile memories for low-voltage, low-power applications
2. Analysis of the degradation of PZT and SrBi2Ta2O9 thin films with a reductive process
3. Investigation of hydrogen induced changes in SrBi2Ta2O9 ferroelectric films
4. Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors
5. The Evaluation of SrBi2Ta2O9 Films for Ferroelectric Memories
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2. Dielectric Materials for Microelectronics;Springer Handbook of Electronic and Photonic Materials;2017
3. Effect of Hydrogen on the Ferroelectric Properties of PbZr0.5Ti0.5O3 during Forming Gas Annealing;Acta Physico-Chimica Sinica;2009
4. Transmission Electron Microscopy Observations on the Interfacial Structures of the Pt/SrBi2Ta2O9/Pt Thin-Film Capacitors Prepared by Metallo-Organic Decomposition;Journal of the American Ceramic Society;2008-03
5. Deterioration Process of Strontium Bismuth Tantalate Induced by Hydrogen Reduction;Ferroelectrics;2006-09
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