Stress effects of the inter-level dielectric layer on the ferroelectric performance of integrated SrBi2Ta2O9 capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371277
Reference7 articles.
1. Polarity-dependent rejuvenation of ferroelectric properties of integrated SrBi2Ta2O9 capacitors by electrical stressing
2. Protection of SrBi2Ta2O9 ferroelectric capacitors from hydrogen damage by optimized metallization for memory applications
3. Intermetal dielectric process using spin-on glass for ferroelectric memory devices having SrBi2Ta2O9 capacitors
4. Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition
5. Stress in silicon dioxide films deposited using chemical vapor deposition techniques and the effect of annealing on these stresses
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1. Secondary Ion Mass Spectrometry Study of Thermal Diffusion of Au Nanoparticles in Porous SiO2 Matrices;Journal of Nanoscience and Nanotechnology;2011-05-01
2. Enhanced Grain Orientation in Pb(Zr,Ti)O3 Powder-Modified SrBi2Ta2O9 Ferroelectric Ceramics;Materials Testing;2011-02-01
3. Polarization change in ferroelectric thin film capacitors under external stress;Journal of Applied Physics;2009-03-15
4. MECHANICAL STABILITY OF Ir ELECTRODES USED FOR STACKED SrBi2Ta2O9 FERROELECTRIC CAPACITORS;Integrated Ferroelectrics;2006-08-17
5. Phase separation of a Ge2Sb2Te5 alloy in the transition from an amorphous structure to crystalline structures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07
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