Electron‐beam penetration in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662759
Reference6 articles.
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5. The Use of Metal-Organics in the Preparation of Semiconductor Materials
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1. Recombination dynamics in pseudomorphic and partially relaxedIn0.23Ga0.77As/GaAs quantum wells;Physical Review B;1990-05-15
2. Optical properties of one- and two-component plasma in GaAs/AiGaAs n-modulation doped heterostructures;Superlattices and Microstructures;1989-01
3. Cathodoluminescence of oval defects in GaAs/AlxGa1−xAs epilayers using an optical fiber light collection system;Applied Physics Letters;1988-11-21
4. Carrier injection in semiconductors with position‐dependent band structure: Electron‐beam‐induced current at heterojunctions;Journal of Applied Physics;1988-09
5. A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence;Journal of The Electrochemical Society;1985-06-01
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