Cathodoluminescence of oval defects in GaAs/AlxGa1−xAs epilayers using an optical fiber light collection system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100319
Reference12 articles.
1. Spatially resolved photoluminescence at oval defects in molecular beam epitaxial GaAs layers
2. Characterization of oval defects in molecular beam epitaxy Ga0.7Al0.3As layers by spatially resolved cathodoluminescence
3. Electron‐beam penetration in GaAs
4. Fabrication of very small devices for the investigation of the one-dimensional transport
5. On the origin and elimination of macroscopic defects in MBE films
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1. MAGNETO-LUMINESCENCE OF A SINGLE LATERAL ISLAND FORMED IN A TYPE - II GaAs/AlAs QW;International Journal of Modern Physics B;2004-11-30
2. Emission from Mesoscopic-Size Islands Formed in a GaAs/AlAs Double Layer Structure;Acta Physica Polonica A;2004-09
3. Optoelectronic material analysis and device failure analysis using SEM cathodoluminescence;Microelectronics Reliability;1994-07
4. Spatial variations of photoluminescence line broadening around oval defects in GaAs/AlGaAs multiple quantum wells;Semiconductor Science and Technology;1992-01-01
5. Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques;Journal of Applied Physics;1991-07-15
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