MAGNETO-LUMINESCENCE OF A SINGLE LATERAL ISLAND FORMED IN A TYPE - II GaAs/AlAs QW-Reference-Cited by-同舟云学术

MAGNETO-LUMINESCENCE OF A SINGLE LATERAL ISLAND FORMED IN A TYPE - II GaAs/AlAs QW

Published:2004-11-30 Issue:27n29 Volume:18 Page:3807-3812
ISSN:0217-9792
Container-title:International Journal of Modern Physics B
language:en
Short-container-title:Int. J. Mod. Phys. B

Author:

CHWALISZ BARBARA¹,WYSMOLEK ANDRZEJ¹,STȨPNIEWSKI ROMAN¹,BABINSKI ADAM¹²,POTEMSKI MAREK²,THIERRY-MIEG VERONIQUE³

Affiliation:

1. Institute of Experimental Physics, Warsaw University, Hoza 69, Warsaw, Poland

2. Grenoble High Magnetic Field Laboratory, MPI/FKF and CNRS, Grenoble, France

3. Laboratoire de Photonique et de Nanostructures, CNRS, 91460 Marcoussis, France

Abstract

Ensembles of sharp emission lines present in the macro-luminescence of type-II GaAs / AlAs double quantum well structures were studied. Micro-luminescence experiments allowed us to conclude that the sharp emission lines originate from lateral GaAlAs islands of a few μm in diameter, formed in the structure. They serve as efficient type-I recombination centers for indirect excitons and/or carriers diffusing in the GaAs / AlAs QW structure. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells. The observed emission is assigned to the recombination of neutral excitons as well as excitonic molecules.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,Statistical and Nonlinear Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0217979204027499

Reference15 articles.

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