Carrier injection in semiconductors with position‐dependent band structure: Electron‐beam‐induced current at heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341633
Reference30 articles.
1. Electron-Beam-Induced Currents in Semiconductors
2. Charge collection scanning electron microscopy
3. Measurement of carrier lifetime, effective recombination velocity, and diffusion length near the grain boundary using the time‐dependent electron‐beam‐induced current
4. Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriers
5. Breakdown voltage characteristics of thin oxides and their correlation to defects in the oxide as observed by the EBIC technique
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4. Numerical simulation of electron-beam-induced gate currents in a GaAs MESFET. I. Theory and model;Journal of Physics D: Applied Physics;1995-05-14
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