A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence-Reference-Cited by-同舟云学术

A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence

Published:1985-06-01 Issue:6 Volume:132 Page:1502-1504
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Marek Jiri¹²³⁴,Geiss Roy¹²³⁴,Glassman Larry M.¹²³⁴,Scott Martin P.¹²³⁴

Affiliation:

1. Hewlett‐Packard, Optical Communications Division, Palo Alto, California 94304

2. IBM Research, San Jose, California 95193

3. GW Electronics, Incorporated, Norcross, Georgia 30092

4. Hewlett‐Packard, Technology Research Center, Palo Alto, California 94304

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2114153/pdf

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