Electrical activation of group‐IV elements implanted at MeV energies in InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351201
Reference33 articles.
1. The electrical characteristics of InP implanted with the column IV elements
2. The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide
3. Carbon implantation in InP
4. Silicon‐ion implantation in InP and annealing with CVD SiO2encapsulation
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1. Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers;Applied Physics Letters;2005-04-04
2. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping;Materials Science and Engineering: B;2001-03
3. Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation;Applied Physics Letters;1997-08-18
4. Amphoteric behavior and precipitation of Ge dopants in InP;Journal of Applied Physics;1996-11
5. Electrical activation and local structure of Se atoms in ion‐implanted indium phosphide;Journal of Applied Physics;1996-06
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