Subject
Physics and Astronomy (miscellaneous)
Cited by
6 articles.
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1. Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-09
2. Electrical properties of In0.5Ga0.5P epilayers codoped with Ge and Te;Solid State Communications;2002-06
3. Ellipsometric Study of Te and Ge Co-Doped In0.5Ga0.5P Alloys;physica status solidi (a);2001-04
4. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping;Materials Science and Engineering: B;2001-03
5. Zinc and group V element co-implantation in indium phosphide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-05