Amphoteric behavior and precipitation of Ge dopants in InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363533
Reference32 articles.
1. Stoichiometric disturbances in ion implanted compound semiconductors
2. Implanted Dopant-Defect Interactons in GaAs
3. Ion implantation in III–V compounds
4. Ion implantation and low‐temperature epitaxial regrowth of GaAs
5. Non-planar solid phase epitaxial growth processes in ion-implanted GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct growth of single-crystalline III–V semiconductors on amorphous substrates;Nature Communications;2016-01-27
2. Epitaxial growth of InP nanowires on germanium;Nature Materials;2004-10-10
3. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping;Materials Science and Engineering: B;2001-03
4. Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates;Journal of Physics and Chemistry of Solids;2001-03
5. Direct observation of the amphoteric behavior of Ge in InP modified by P co-implantation;Applied Physics Letters;1997-08-18
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