High-resolution stress assessments of interconnect/dielectric electronic patterns using optically active point defects of silica glass as a stress sensor-Reference-Cited by-同舟云学术

High-resolution stress assessments of interconnect/dielectric electronic patterns using optically active point defects of silica glass as a stress sensor

Published:2007-05 Issue:9 Volume:101 Page:093514
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Leto Andrea,Porporati Alessandro Alan,Zhu Wenliang,Green Martin,Pezzotti Giuseppe

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2723193

Reference49 articles.

1. Reliability of Metal Interconnects

2. Dielectric cracking produced by electromigration in microelectronic interconnects

4. High‐resolution determination of the stress in individual interconnect lines and the variation due to electromigration

5. A method to interpret micro-Raman experiments made to measure nonuniform stresses: Application to local oxidation of silicon structures

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