A method to interpret micro-Raman experiments made to measure nonuniform stresses: Application to local oxidation of silicon structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368411
Reference21 articles.
1. Stress‐related problems in silicon technology
2. Film‐edge‐induced stress in substrates
3. Micro‐Raman study of stress distribution in local isolation structures and correlation with transmission electron microscopy
4. Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment
5. Experimental validation of mechanical stress models by micro-Raman spectroscopy
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