Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3168513
Reference14 articles.
1. Charge-trapping memory cell of SiO2∕SiN∕high‐k dielectric Al2O3 with TaN metal gate for suppressing backward-tunneling effect
2. Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal–oxide–semiconductor transistors realized by high-density Si3N4 buffer layers
3. SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing
4. Effect of metal contacts on the electrical characteristics of Al2O3 dielectric thin films
5. Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy
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