Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors-Reference-Cited by-同舟云学术

Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors

Published:2023-04 Issue:4 Volume:70 Page:1996-2000
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kim Bong Ho¹^ORCID,Kuk Song-Hyeon¹^ORCID,Kim Seong Kwang¹,Kim Joon Pyo¹,Suh Yoon-Je¹^ORCID,Jeong Jaeyong¹,Geum Dae-Myeong¹,Baek Seung-Hyub²,Kim Sang Hyeon¹^ORCID

Affiliation:

1. School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea

2. Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, South Korea

Funder

NRF

BK21 FOUR, Korea Advanced Institute of Science and Technology for Processing In Memory

IC Design Education Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10050415.pdf?arnumber=10050415

Reference28 articles.

1. Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

2. Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

3. Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$

4. Enhanced Reliability of Ferroelectric HfZrO x on Semiconductor by Using Epitaxial SiGe as Substrate

5. Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 1T1M Programmable Artificial Spiking Neuron via the Integration of FeFET and NbOₓ Mott Memristor;IEEE Electron Device Letters;2024-07

2. Low Operating Voltage and Immediate Read‐After‐Write of HZO‐Based Si Ferroelectric Field‐Effect Transistors with High Endurance and Retention Characteristics;Advanced Electronic Materials;2023-10-16