Al2O3/Si3N4 stacked insulators for 0.1 μm gate metal–oxide–semiconductor transistors realized by high-density Si3N4 buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1579850
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1. Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure
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1. Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg;Applied Physics Letters;2009-06-29
2. Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications;Applied Physics Letters;2008-07-14
3. Electronic Properties of Atomic-Layer-Deposited Al[sub 2]O[sub 3]/Thermal-Nitrided SiO[sub 2] Stacking Dielectric on 4H SiC;Electrochemical and Solid-State Letters;2007
4. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition;Applied Physics Letters;2006-03-20
5. Property Changes of Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition under Photon Radiation;Journal of The Electrochemical Society;2006
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