Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers-Reference-Cited by-同舟云学术

Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers

Published:2012-01-23 Issue:4 Volume:100 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mahadik Nadeemullah A.,Stahlbush Robert E.,Ancona M. G.,Imhoff Eugene A.,Hobart Karl D.,Myers-Ward Rachael L.,Eddy Charles R.,Kurt Gaskill D.,Kub Fritz J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3679609

Reference16 articles.

1. Progress in silicon carbide semiconductor electronics technology

2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

3. Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

4. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V_f Drift in SiC Bipolar Power Devices

5. Driving Force of Stacking-Fault Formation in SiCp−i−nDiodes

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