Temperature-dependent polarity reversal in Au/TlGaSe2 Schottky junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3082506
Reference20 articles.
1. The structure of the paraelectric and incommensurate phases of TlGaSe2
2. Negative thermal expansion in the layered semiconductor TlGaSe2
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1. Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction;Semiconductor Science and Technology;2020-10-16
2. Electron – Phonon interaction to tune metal – Semiconductor junction characteristics: Ultralow potential barrier and less non-thermionic emission;Physica B: Condensed Matter;2018-10
3. Defects forming the optical absorption edge in TlGaSe2 layered crystal;Journal of Physics and Chemistry of Solids;2016-09
4. Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric–Semiconductor;Ferroelectrics;2015-06-01
5. Phase transition sensitive to interlayer defects in layered semiconductor TlGaSe2;Solid State Sciences;2012-03
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