Defects forming the optical absorption edge in TlGaSe2 layered crystal
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference36 articles.
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1. Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects;Journal of Applied Physics;2024-05-22
2. The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects;Semiconductor Science and Technology;2024-02-15
3. Modification of the optical and elastic properties of TlGaSe2 layered semiconductor produced by the memory effect;Physica Scripta;2023-11-08
4. A Study of Thermoelectric Performance of TlGaSe 2 Layered Dichalcogenides from First‐Principles Calculations: Vacancy Defects Modeling and Engineering;physica status solidi (b);2021-11-09
5. Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction;Semiconductor Science and Technology;2020-10-16
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