Phase transition sensitive to interlayer defects in layered semiconductor TlGaSe2
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference26 articles.
1. Untersuchungen �ber tern�re Chalkogenide. XXIV. Zur Struktur des TlGaSe2
2. The structure of the paraelectric and incommensurate phases of TlGaSe2
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1. Electric-field-induced surface modification in TlGaSe2 layered semiconductor: Capacitive effect caused by electromigration of native defects;Journal of Applied Physics;2024-05-22
2. Modification of the optical and elastic properties of TlGaSe2 layered semiconductor produced by the memory effect;Physica Scripta;2023-11-08
3. A Study of Thermoelectric Performance of TlGaSe 2 Layered Dichalcogenides from First‐Principles Calculations: Vacancy Defects Modeling and Engineering;physica status solidi (b);2021-11-09
4. Mott barrier behavior of metal–TlGaSe2 layered semiconductor junction;Semiconductor Science and Technology;2020-10-16
5. Origin of the optical absorption of TlGaSe2 layered semiconductor in the visible range;Semiconductor Science and Technology;2018-06-27
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