Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric–Semiconductor-Reference-Cited by-同舟云学术

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Manifestation of the Memory Effect in Photovoltaic Properties of TlGaSe2 Ferroelectric–Semiconductor

Published:2015-06-01 Issue:1 Volume:481 Page:77-88
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Seyidov МirHasan Yu.¹²,Suleymanov Rauf A.¹²,Balaban Ertan¹³,Şale Yasin¹

Affiliation:

1. Department of Physics, Gebze Institute of Technology, 41400, Gebze, Kocaeli, Turkey

2. Institute of Physics of NAS of Azerbaijan, H. Javid av., 33, AZ-1143, Baku, Azerbaijan

3. TUBITAK-BILGEM, Scientificand Technical Research Council of Turkey, Gebze, Kocaeli 41470, Turkey

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/00150193.2015.1049505

Reference24 articles.

1. Experimental studies of structurally incommensurate crystal phases

2. Defect‐density waves and memory effects in modulated systems

3. The structure of the paraelectric and incommensurate phases of TlGaSe2

4. Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2

5. The effect of impurities on the phase transitions in the ferroelectric semiconductors TlInS2and TlGaSe2

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification of the optical and elastic properties of TlGaSe₂ layered semiconductor produced by the memory effect;Physica Scripta;2023-11-08

2. Effect of Modification of the Contribution of the Thermal Emission of Localized Charges to the Relaxation of the Photoresponse of a TlGaSe2 Single Crystal;Physics of the Solid State;2020-04

3. Defects forming the optical absorption edge in TlGaSe2 layered crystal;Journal of Physics and Chemistry of Solids;2016-09

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