Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2-Reference-Cited by-同舟云学术

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Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2

Published:2003-10 Issue:1 Volume:128 Page:25-28
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Aliyev V.P,Babayev S.S,Mammadov T.G,Seyidov Mir-Hasan Yu,Suleymanov R.A

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference28 articles.

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modification of the optical and elastic properties of TlGaSe₂ layered semiconductor produced by the memory effect;Physica Scripta;2023-11-08

2. Effect of Modification of the Contribution of the Thermal Emission of Localized Charges to the Relaxation of the Photoresponse of a TlGaSe2 Single Crystal;Physics of the Solid State;2020-04

3. Anisotropic optical constants and inter-band optical transitions in layered semiconductor TlGaSe2;Applied Surface Science;2017-11

4. Quantification of the memory effect of steady-state currents from interaction-induced transport in quantum systems;Physical Review A;2017-09-22

5. Defects forming the optical absorption edge in TlGaSe2 layered crystal;Journal of Physics and Chemistry of Solids;2016-09

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