Five-nanometer thick silicon on insulator layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1803625
Reference7 articles.
1. Thin film SOI emerges
2. Large area silicon on insulator by double-merged epitaxial lateral overgrowth
3. Electrical characteristics of epitaxial CeO2on Si(111)
4. Reaction and regrowth control of CeO2on Si(111) surface for the silicon‐on‐insulator structure
5. Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation
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1. Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111);Journal of Crystal Growth;2012-09
2. Stacking behavior of twin-free type-Boriented CeO2(111) films on hexagonal Pr2O3(0001)/Si(111) systems;Physical Review B;2012-01-03
3. Complex interface and growth analysis of single crystalline epi-Si(111)/Y2 O3 / Pr2 O3 /Si(111) heterostructures: Strain engineering by oxide buffer control;Surface and Interface Analysis;2011-03-08
4. A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures;New Journal of Physics;2010-09-06
5. Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities;Journal of Applied Physics;2009-11-15
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