Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111)-Reference-Cited by-同舟云学术

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Stoichiometry–structure correlation of epitaxial Ce1−xPrxO2−δ (x=0−1) thin films on Si(111)

Published:2012-09 Issue:1 Volume:355 Page:159-165
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zoellner Marvin Hartwig,Zaumseil Peter,Wilkens Henrik,Gevers Sebastian,Wollschläger Joachim,Bäumer Marcus,Xie Ya-Hong,Niu Gang,Schroeder Thomas

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference51 articles.

1. Electrical Properties of Single Crystalline CeO2High-k Gate Dielectrics Directly Grown on Si (111)

2. Five-nanometer thick silicon on insulator layer

3. On the oxidative coupling of methane with carbon dioxide over CeO2/ZnO nanocatalysts

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inhibition mechanism of anticorrosion pigments leached from organic coatings: Comparison between salt spray and immersion testing;Progress in Organic Coatings;2023-01

2. Effect of Pr on the electrical and chemical properties of cerium oxide prepared by combustion method;International Journal of Applied Ceramic Technology;2019-06-05

3. Deposition of CeO2 nanoparticle layer on Al2O3 (0001), LaAlO3 (001), and Y2O3-stabilized ZrO2 (001) substrates from colloidal toluene solution;Japanese Journal of Applied Physics;2017-12-21

4. CeO 2 nanocrystals and solid-phase heteroepitaxy of CeAlO 3 interlayer on Al 2 O 3 (0 0 0 1) substrate;Journal of Crystal Growth;2017-04

5. Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111);Physical Chemistry Chemical Physics;2015

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