Complex interface and growth analysis of single crystalline epi-Si(111)/Y2 O3 / Pr2 O3 /Si(111) heterostructures: Strain engineering by oxide buffer control-Reference-Cited by-同舟云学术

Complex interface and growth analysis of single crystalline epi-Si(111)/Y2 O3 / Pr2 O3 /Si(111) heterostructures: Strain engineering by oxide buffer control

Published:2011-03-08 Issue:4 Volume:43 Page:827-835
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Wilke A.,Yang J.-M.,Kim J. W.,Seifarth O.,Dietrich B.,Giussani A.,Zaumseil P.,Storck P.,Schroeder T.

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.3643/fullpdf

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