Nitrogen-related electron traps in Ga(As,N) layers (⩽3% N)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1568523
Reference23 articles.
1. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
2. Luminescence of as-grown and thermally annealed GaAsN/GaAs
3. Structural changes during annealing of GaInAsN
4. Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal
5. Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
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