High-k cobalt–titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1352044
Reference3 articles.
1. Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
2. Leakage currents in amorphous Ta2O5 thin films
3. High Quality Ultrathin CoTiO[sub 3] High-k Gate Dielectrics
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