Dry etching properties of TiO2 thin films in O2/CF4/Ar plasma
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference19 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
3. Etch Characterization of TiO$_{2}$ Thin Films Using Metal–Insulator–Metal Capacitor in Adaptively Coupled Plasma
4. Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma
5. Dry etching of titanium nitride thin films in CF4–O2 plasmas
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