Dry etching of titanium nitride thin films in CF4–O2 plasmas-Reference-Cited by-同舟云学术

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Dry etching of titanium nitride thin films in CF4–O2 plasmas

Published:1995-03 Issue:2 Volume:13 Page:335-342
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Fracassi F.,d’Agostino R.,Lamendola R.,Mangieri I.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579419

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale refractory doped titanium nitride field emitters;Nanotechnology;2021-05-14

2. Thermal gas-phase etching of titanium nitride (TiN) by thionyl chloride (SOCl2);Applied Surface Science;2021-02

3. Metal Hard Mask Open Process Window Enhanced by Insertion of Polymer Deposition;2020 China Semiconductor Technology International Conference (CSTIC);2020-06-26

4. A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory;Journal of Alloys and Compounds;2020-03

5. Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation;IEEE Access;2020

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