Engineering amorphous-crystalline interfaces in TiO2−x/TiO2−y-based bilayer structures for enhanced resistive switching and synaptic properties
Author:
Affiliation:
1. Department of Applied Physics, National Technical University of Athens, Iroon Polytechniou 9 Zografou, 15780 Athens, Greece
Funder
ARISTEIA II
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4964872
Reference35 articles.
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5. Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching
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